APTGT50DH120T3G APTGT50DH120T3G ? rev 0 april, 2009 www.microsemi.com 1-5 application ? welding converters ? switched mode power supplies ? switched reluctance motor drives features ? fast trench + field stop igbt technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? internal thermistor fo r temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive t c of v cesat ? rohs compliant absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 75 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 277 w rbsoa reverse bias safe operating area t j = 125c 100a @ 1150v these devices are sensitive to electrosta tic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com 23 r1 32 30 cr3 cr1 q4 cr2 cr4 31 29 19 7 22 3 4 18 8 q1 15 16 13 14 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? v ces = 1200v i c = 50a @ tc = 80c asymmetrical - bridge fast trench + field stop igbt power module
APTGT50DH120T3G APTGT50DH120T3G ? rev 0 april, 2009 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 250 a t j = 25c 1.4 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 2ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3600 c rss reverse transfer capacitance v ge = 0v,v ce = 25v f = 1mhz 160 pf q g gate charge v ge =15v, i c =50a v ce =600v 0.5 c t d(on) turn-on delay time 90 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 50a r g = 18 70 ns t d(on) turn-on delay time 90 t r rise time 50 t d(off) turn-off delay time 520 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 50a r g = 18 90 ns e on turn-on switching energy t j = 125c 5 e off turn-off switching energy v ge = 15v v bus = 600v i c = 50a r g = 18 t j = 125c 5.5 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 125c 200 a diode ratings and characteristics (cr2 & cr3) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 50 a t j = 25c 1.6 2.1 v f diode forward voltage i f = 50a t j = 125c 1.6 v t j = 25c 170 t rr reverse recovery time t j = 125c 280 ns t j = 25c 5.6 q rr reverse recovery charge t j = 125c 9.9 c t j = 25c 2.2 e r reverse recovery energy i f = 50a v r = 600v di/dt =1900a/s t j = 125c 4.1 mj cr1 & cr4 are igbt protection diodes only
APTGT50DH120T3G APTGT50DH120T3G ? rev 0 april, 2009 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.45 r thjc junction to case thermal resistance diode 0.72 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTGT50DH120T3G APTGT50DH120T3G ? rev 0 april, 2009 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 20 40 60 80 100 00.511.522.533.5 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 20 40 60 80 100 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 20 40 60 80 100 56789101112 v ge (v) i c (a) energy losses vs collector current eon eon eoff er 0 2 4 6 8 10 12 0 20406080100 i c (a) e (mj) v ce = 600v v ge = 15v r g = 18 ? t j = 125c eon eoff er 0 2 4 6 8 10 12 0 1020304050607080 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 50a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 20 40 60 80 100 120 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =18 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT50DH120T3G APTGT50DH120T3G ? rev 0 april, 2009 www.microsemi.com 5-5 forward characteristic of diode t j =25c t j =125c t j =125c 0 20 40 60 80 100 00.511.522.5 v f (v) i f (a) hard switching zcs zvs 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =18 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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